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| absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 9.4 i d @ v gs = 12v, t c = 100c continuous drain current 6.0 i dm pulsed drain current 37.6 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 150 mj i ar avalanche current 9.4 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 16 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in.(1.6mm) from case for 10s) weight 7.0 (typical) g pre-irradiation international rectifier?s rad-hard hexfet ? technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened power mosfet thru-hole (t o-257aa) www.irf.com 1 product summary part number radiation level r ds(on) i d qpl part number irhy7230cm 100k rads (si) 0.40 ? 9.4a jansr2n7381 IRHY3230CM 300k rads (si) 0.40 ? 9.4a jansf2n7381 irhy4230cm 500k rads (si) 0.40 ? 9.4a jansg2n7381 irhy8230cm 1000k rads (si) 0.40 ? 9.4a jansh2n7381 irhy7230cm jansr2n7381 200v, n-channel ref:mil-prf-19500/614 rad-hard ? hexfet ? technology to-257aa features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets light weight pd-91273e 2 www.irf.com irhy7230cm, jansr2n7381 pre- irradiation note: corresponding spice and saber models are available on international rectifier website. source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 9.4 i sm pulse source current (body diode) ? ? 37.6 v sd diode forward voltage ? ? 1.4 v t j = 25c, i s = 9.4a, v gs = 0v t rr reverse recovery time ? ? 460 ns t j = 25c, i f = 9.4a, di/dt 100a/ s q rr reverse recovery charge ? ? 2.4 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 r thja junction-to-ambient ? ? 80 t ypical socket mount electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 200 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.23 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.40 ? v gs = 12v, i d = 6.0a resistance ? ? 0.49 v gs = 12v, i d = 9.4a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 2.5 ? ? s ( ) v ds > =15v, i ds = 6.0a i dss zero gate voltage drain current ? ? 25 v ds = 160v ,v gs = 0v ? ? 250 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 v gs =12v, i d = 9.4a q gs gate-to-source charge ? ? 10 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 25 t d (on) turn-on delay time ? ? 35 v dd = 100v, i d = 9.4a t r rise time ? ? 75 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 70 t f fall time ? ? 60 l s + l d total inductance ? 7.0 ? c iss input capacitance ? 1200 ? v gs = 0v, v ds = 25v c oss output capacitance ? 250 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 63 ? na ? nh ns a measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) c/w www.irf.com 3 pre-irradiation irhy7230cm, jansr2n7381 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100 k rads(si) 1 300k - 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 ? 200 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 25 ? 25 a v ds =160v, v gs =0v r ds(on) static drain-to-source ? 0.40 ? 0.53 ? v gs = 12v, i d = 6.0a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.40 ? 0.53 ? v gs = 12v, i d = 6.0a on-state resistance (to-257aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhy7230cm (jansr2n7381) 2. part numbers IRHY3230CM (jansf2n7381), irhy4230cm (jansg2n7381), and irhy8230cm (jansh2n7381) fig a. single event effect, safe operating area v sd diode forward voltage ? 1.4 ? 1.4 v v gs = 0v, i s = 9.4a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. 0 50 100 150 200 0 -5 -10 -15 -20 vgs vds cu br table 2. single event effect safe operating area ion let energy range v ds(v) (mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v cu 28 285 43 190 180 170 125 ? br 36.8 305 39 100 100 100 50 ? 4 www.irf.com irhy7230cm, jansr2n7381 pre- irradiation 1 10 100 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 5 6 7 8 9 10 11 1 2 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 16 0 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 9.4a www.irf.com 5 pre-irradiation irhy7230cm, jansr2n7381 ! ! " " " #$ 1 10 100 0 500 1000 1500 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 5 0 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 9.4a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2. 2 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 1 10 100 100 0 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 6 www.irf.com irhy7230cm, jansr2n7381 pre- irradiation $ v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f $ %& 1 0.1 % + - ' & ( )* " v gs 25 50 75 100 125 150 0 2 4 6 8 10 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.irf.com 7 pre-irradiation irhy7230cm, jansr2n7381 q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& & ' " . ( & %& . ( & t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.2a 5.9a 9.4a 8 www.irf.com irhy7230cm, jansr2n7381 pre- irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l=3.40mh peak i l = 9.4a, v gs =12v i sd 9.4a, di/dt 660a/ s, v dd 200v, t j 150c foot notes: case outline and dimensions ? to-257aa ! " " " ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/2006 |
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